Nanocenter

Institute of the functional nuclear electronics is an educational and scientific structural unit of the Federal State Budget Institution of Higher Professional Education "National Nuclear Research University" MEPhI ".

The main purpose of the Institute is the fulfillment of basic scientific research, implementation of applied research and training in the field of electronics heterostructures (UHF -, power and opto-electronics), nanotechnology and new materials technology.
The main objectives of the Institute are:
- Coordination of research and development activities (hereinafter - the R & D) on the most important scientific and technical issues in the field of heterostructure nanoelectronics, and extreme power electronics, as well as in related fields of technology and materials related to the priority activities of the University and the State Corporation Rosatom.
- Coordination of vocational orientation work carried out by university teachers, promote continuous practical training of students, implement the results of research work in the educational process.
The main scientific activities of the Institute are:
- Development of heterostructure microwave devices and integrated circuits based on gallium arsenide for broadband wireless communication systems, airborne radar, high-sensitivity radiometers, etc.;
- Development of production technology heteroepitaxial structures based on nitride compounds for high-power semiconductor devices and microwave integrated circuits;
- Creation of advanced light-emitting structures based on gallium arsenide and Group III nitrides, including white LEDs glow for energy-efficient lighting sources;
- Development of technology of new materials with photonic band gap for promising optoelectronic engineering, optical and микрооптоэлектромеханических systems.
- Development of technology of laser deposition of thin films of HTS cables for superconducting energy storage units.
- Research and development in the field of spintronics.
IFYAE laboratory has a total area 633 m2. Area of clean room cleanliness class ISO8 - ISO6 is 222 m2. In these areas there are 10 sites - laboratories equipped with modern scientific research and technological equipment to perform the following operations:
- MBE for heterostructures on GaAs and InP, quantum structures with vertical transport of electrons to form a resonant tunneling devices, structures with quantum dots and quantum rings for nanoelectronics and optoelectronics;
- Electron-beam nanolithography (area equipped with facilities Raith 150 TWO-based field-emission scanning microscope with an attachment for nanolithography);
- Besshablonnoy laser lithography with topological size up to 0,6 m for the direct exposure of plates and the creation of photomasks.
- UV contact photolithography with high resolution up to 0,5 mm;
- Vysokovakuunogo deposition of metals with electron beam and thermal (resistive) evaporation;
- Precision plasma deposition and etching of dielectrics;
- Scanning Probe Microscopy (core area is complex «Omicron», combining the techniques of scanning probe microscopy and X-ray photoemission spectroscopy).
The institute has close ties with major Russian companies and leading academic centers: Federal State Unitary Enterprise GZ "Pulsar", Federal State Unitary Enterprise "NPP" Istok ", OJSC" Concern "Vega", Institution of the Russian Academy of Sciences Institute of microwave semiconductor electronics RAS Institution of the Russian Academy of Sciences Institute of Radio Engineering and Electronics NIIIS them. YE Sedakova; Concern "RTI Systems", Physics and Technology Institute, Russian Academy of Sciences, Moscow State University. MV Governors and others
General management of the rector of the Institute shall NRNU MEPI MN Strikhanov.

Location of the Institute - Moscow, Kashirskoye, house 31, building № 44a, NRNU MEPI.